共 50 条
- [1] INFLUENCE OF THE BARRIER THICKNESS ON THE NOISE PERFORMANCE OF ALAS/GAAS/ALAS DOUBLE-BARRIER RESONANT-TUNNELING DIODESJOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 6026 - 6030OUACHA, AWILLANDER, MBRUGGER, HMEINERS, U
- [2] EFFECT OF BARRIER THICKNESS ASYMMETRIES ON THE ELECTRICAL CHARACTERISTICS OF ALAS/GAAS DOUBLE BARRIER RESONANT TUNNELING DIODESJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 1042 - 1044TSAO, AJREDDY, VKMILLER, DRGULLAPALLI, KKNEIKIRK, DP
- [3] EFFECT OF SI DOPING IN ALAS BARRIER LAYERS OF ALAS-GAAS-ALAS DOUBLE-BARRIER RESONANT TUNNELING DIODESAPPLIED PHYSICS LETTERS, 1989, 55 (06) : 572 - 574CHENG, PHARRIS, JS
- [4] EPITAXIAL LIFTOFF OF ALAS GAAS DOUBLE BARRIER RESONANT TUNNELING DIODESELECTRONICS LETTERS, 1991, 27 (06) : 484 - 486TSAO, AJREDDY, VKNEIKIRK, DP
- [5] EFFECTIVE MASS IN THE BARRIERS OF GAAS/ALAS RESONANT TUNNELING DOUBLE BARRIER DIODESSUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (01) : 55 - 59LANDHEER, DAERS, GCWASILEWSKI, ZR
- [6] OPTICAL INVESTIGATION OF TUNNELING IN ALAS/GAAS/ALAS DOUBLE-BARRIER DIODESPHYSICAL REVIEW B, 1993, 47 (23): : 15705 - 15716ANDREWS, SRTURBERFIELD, AJMILLER, BA
- [7] RESONANT TUNNELING OF HOLES IN ALAS GAAS TRIPLE BARRIER DIODESAPPLIED PHYSICS LETTERS, 1987, 50 (15) : 974 - 976NAKAGAWA, TFUJITA, TMATSUMOTO, YKOJIMA, TOHTA, K
- [8] INFLUENCE OF GROWTH INTERRUPTION ON IV CHARACTERISTICS OF ALAS/GAAS DOUBLE BARRIER RESONANT TUNNELING DIODESJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 1045 - 1047REDDY, VKNEIKIRK, DP
- [9] PRECISE CONTROL OF RESONANT TUNNELING CURRENT IN ALAS/GAAS/ALAS DOUBLE BARRIER DIODES WITH ATOMICALLY-CONTROLLED BARRIER WIDTHSJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L185 - L187TSUCHIYA, MSAKAKI, H
- [10] EFFECT OF ELECTRON LAUNCHER STRUCTURES ON ALAS/GAAS DOUBLE BARRIER RESONANT TUNNELING DIODESJOURNAL OF APPLIED PHYSICS, 1993, 73 (05) : 2540 - 2542YANG, LMARS, DETAN, MRT
