Electrical reliability and structural inhomogeneity of thermally grown SiO2

被引:0
|
作者
Toriumi, A. [1 ]
Satake, H. [1 ]
Yasuda, N. [1 ]
Tanamoto, T. [1 ]
机构
[1] Toshiba Corp, Kawasaki, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
页码:230 / 236
相关论文
共 50 条
  • [1] Electrical reliability and structural inhomogeneity of thermally grown SiO2
    Toriumi, A
    Satake, H
    Yasuda, N
    Tanamoto, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 230 - 236
  • [2] INSTABILITIES IN THERMALLY GROWN SIO2
    NICOLLIAN, EH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C85 - C85
  • [3] HOLE CURRENTS IN THERMALLY GROWN SIO2
    VERWEY, JF
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2273 - &
  • [4] AN IRRADIATION EFFECT IN THERMALLY GROWN SIO2
    WELLS, OC
    APPLIED PHYSICS LETTERS, 1969, 14 (01) : 5 - &
  • [5] CONDUCTANCE SWITCHING OF THERMALLY GROWN SIO2
    WILMSEN, CW
    ALLENDER, MC
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1912 - 1914
  • [6] ELECTRONIC CONDUCTION IN THERMALLY GROWN SIO2
    LENZLING.M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C86 - &
  • [7] Structural characteristics of thermally grown SiO2 prepared by a home made furnace
    Mat, AFA
    Musa, H
    Majlis, BY
    2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2000, : 200 - 202
  • [8] Improvement in electrical characteristics of ultrathin thermally grown SiO2 by selective anodic oxidation
    Paily, R
    DasGupta, A
    DasGupta, N
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) : 707 - 709
  • [9] REDUCTION OF THERMALLY GROWN SIO2 BY AL FILMS
    GERSHINSKII, AE
    KHOROMENKO, AA
    EDELMAN, FL
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (02): : 645 - 651
  • [10] Formation of thermally grown SiO2/GaN interface
    Akazawa, Masamichi
    Kitawaki, Yuya
    AIP ADVANCES, 2021, 11 (08)