MINIATURIZED HIGH SPEED OPTICAL TRANSMITTER/RECEIVER MODULES USING 1. 3 mu m LED AND PIN-PHOTODIODE.

被引：0
|
作者：
Iguchi, S. [1 ]
Kuhara, Y. [1 ]
Hayashi, S. [1 ]
机构：
[1] Sumitomo Electric Industries Ltd,, R&D Group, Osaka, Jpn, Sumitomo Electric Industries Ltd, R&D Group, Osaka, Jpn
来源：
Denshi Tokyo | 1984年 / 23期
关键词：
SEMICONDUCTOR DIODES; LIGHT EMITTING - SEMICONDUCTOR DIODES; PHOTODIODE;
D O I：
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中图分类号：
学科分类号：
摘要：
The feasibility of high bit rate optical data links using 1. 3 mu m InGaAsP/InP LEDs is studied. It is made clear that several hundred Mb/s and a few kilometer transmission is feasible with InGaAsP/InP LEDs whose center wavelengths are designed to be approximately 1320 nm, 62. 5 mu m core, 125 mu m cladding, NA equals 0. 29 graded index fibers, and with InGaAs/InP PIN-photodiodes. According to this investigation, we have developed the high speed and high radiance InGaAsP/InP LEDs and the high responsibility, low capacitance and low dark current InGaAs/InP PIN-photodiodes. By making use of these optical devices, we have assembled miniaturized transmitter/receiver modules.
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页码：62 / 65
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