A new AIGaAs/GaAs/InGaAs lasing switch grown by MBE

被引：0
|
作者：
Lee, Ming Rong [1 ]
Yarn, K.F. [1 ]
Chang, W.R. [1 ]
机构：
[1] Far East College, Department of Electrical Engineering, Optoeiectronic Semiconductor Center, P. O. Box 345, Tainan 704, Taiwan
来源：
Active and Passive Electronic Components | 2001年 / 24卷 / 04期
关键词：
Semiconductor quantum wells;
D O I：
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学科分类号：
摘要：
A quantum well optoelectronic switch (QWOES) based on regenerative loop ofpotential barrier lowering resulted from the forward biased pn junction is demonstrated in a A1GaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(=Vs/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 k Ω, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm. © 2001 OPA (Overseas Pubtishers Auociaflon) N.V.
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页码：231 / 236
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