Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures

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作者：
Quagliano, L.G. [1 ]
Sobiesierski, Z. [2 ]
Orani, D. [1 ]
Ricci, A. [1 ]
机构：
[1] I.M.A.I.-C.N.R., Area della Ricerca di Roma, 00016 Monterotondo Scalo, Roma, Italy
[2] Department of Physics and Astronomy, Cardiff University, P.O. Box 913, Cardiff CF1 3TH, United Kingdom
来源：
Physica B: Condensed Matter | 1999年 / 263卷
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页码：775 / 778
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