ORIENTATION OF THE FIELD IN THE SPONTANEOUS ELECTROABSORPTION IN GaAs.

被引：0
|
作者：
Akopyan, R.M.
Berozashvili, Yu.N.
Dzhanelidze, M.B.
Dundua, A.V.
机构：
来源：
| 1600年 / 16期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING GALLIUM COMPOUNDS
引用
收藏
相关论文
共 50 条
  • [31] INFLUENCE OF THE ORIENTATION OF THE ELECTRIC FIELD ON THE POLARIZATION DEPENDENCE OF THE ELECTROABSORPTION IN SILICON.
    Gutkin, A.A.
    Nasledov, D.N.
    Faradzhev, F.E.
    1600, (08):
  • [32] SULFUR ION-IMPLANTED GaAs.
    Sakurai, Teruo
    Nanbu, Kazuo
    Furuya, Tsuneo
    Fujitsu Scientific and Technical Journal, 1976, 12 (03): : 121 - 130
  • [33] EXCITON-PLASMA TRANSITION IN GaAs.
    Collet, J.
    1600, (46):
  • [34] THRESHOLD ENERGY FOR IMPACT IONIZATION IN GaAs.
    Shekhar, Chandra
    Sharma, S.K.
    Indian Journal of Pure and Applied Physics, 1974, 12 (03): : 179 - 181
  • [35] PROPERTIES OF THE 78 meV ACCEPTOR IN GaAs.
    Moore, W.J.
    Hawkins, R.L.
    Shanabrook, B.V.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1986, 146 (1-2): : 65 - 74
  • [36] Investigation of As-precipitates in SI GaAs.
    Strzelecka, S
    Pawlowska, M
    Hruban, A
    Gladysz, M
    Wegner, E
    Gladki, A
    Orlowski, W
    SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION, 1997, 3178 : 238 - 241
  • [37] RESONANCE RAMAN SCATTERING OF LIGHT IN GaAs.
    Belyi, N.M.
    Vakulenko, O.V.
    Gubanov, V.A.
    Skryshevskii, V.A.
    Journal of applied spectroscopy, 1984, 41 (02) : 938 - 942
  • [38] DEEP DEFECT LEVELS IN PLASTICALLY DEFORMED GaAs.
    Suezawa, Masashi
    Sumino, Koji
    1600, (25):
  • [39] CHARACTERIZATION OF IMPURITIES AND MICRO-DEFECTS IN GaAs.
    Ishii, Yoshikazu
    Homma, Yoshikazu
    Ikeda, Kohsuke
    Takaoka, Hidetoshi
    Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku, 1984, 33 (04): : 707 - 719
  • [40] ULTRAFAST RELAXATION OF HOT PHOTOEXCITED CARRIERS IN GaAs.
    Ferry, D.K.
    Osman, M.A.
    Joshi, R.
    Kann, M.-J.
    Solid-State Electronics, 1987, 31 (3-4) : 401 - 406
12345