Patent survey on semiconductors

被引：0
|
作者：
Terpstra, Marten
机构：
来源：
Microelectronics Journal | 1992年 / 23卷 / 02期
关键词：
Crystals - Growing - Films - Grain Boundaries - Films - Heat Treatment - Semiconducting Films - Crystalline - Semiconducting Films - Thin Films;
D O I：
10.1016/0026-2692(92)90040-8
中图分类号：
学科分类号：
摘要：
Three Japanese patents reflecting technological improvements in semiconducting thin films, substrates, and integrated circuit manufacture are reviewed. One is a method developed for forming a semiconductor thin film applicable to a constituent element of a three-dimensional integrated circuit or to a large area electronic device. Another is a technology for manufacturing a substrate for semiconductor devices which is formed by bonding wafers together. The third is an apparatus for the preparation of a titanium-layer for highly integrated circuits by chemical vapour phase separation.
引用
收藏
页码：93 / 96
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