Reliability improvement of Al-gate power GaAs-MESFET

被引：0

作者：

Kuroda, Masahiro ^{[1
]}

机构：

[1] Komukai Works, Toshiba Corporation, Kawasaki, 210-8581, Japan

来源：

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 2000年 / 83卷 / 07期

关键词：

Aluminum - Deposition - Electric breakdown of solids - Electromigration - Photoresists - Semiconducting gallium arsenide;

D O I：

10.1002/1520-6432(200007)83:73.0.CO;2-1

中图分类号：

学科分类号：

摘要：

This paper reports on the reliability improvement of Al-gate power GaAs-MESFET (FET) formed by the photoresist liftoff process (PLP). Al electromigration (EM) tolerance improvement with a higher deposition rate and lower outgas photoresist, a gate breakdown voltage (BVgd) improvement with fine recess control for the channel layer, and the mean time to failure (MTTF) at the 1-dB gain compression point in high-temperature RF operating life tests (HTRF) are described. We observed the parameters of the median time to failure (MTF) with high-temperature forward-bias tests (HTFB), as well as BVgd, and the gate current. The contributions of these parameters to MTTF are estimated by using an RF gate current simulation.

引用

页码：22 / 30

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