Atom-rearrangement in Ge layer grown on Si substrate during anneal observed in real time by coaxial impact collision ion scattering spectroscopy

被引：0
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作者：
Saitoh, T. [1 ]
Tamura, M. [1 ]
Palmer, J.E. [1 ]
Yodo, T. [1 ]
机构：
[1] Optoelectronics Technology Research, Lab, Ibaraki, Japan
来源：
Journal of Crystal Growth | 1995年 / 150卷 / 1 -4 pt 2期
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摘要：
9
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页码：955 / 959
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