Microcharacterization and novel device applications of semiconductor-metal eutectic composites

被引：0
|
作者：
Ditchek, B.M. [1 ]
Yacobi, B.G. [1 ]
机构：
[1] GTE Lab, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
6
引用
收藏
页码：2155 / 2157
相关论文
共 50 条
  • [21] PHOTOSENSITIVITY IN SEMICONDUCTOR-METAL POINT CONTACT
    VILISOV, AA
    VORONKOV, VP
    VYATKIN, AP
    ZAIKOV, LA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (07): : 126 - &
  • [22] STRUCTURAL TRANSFORMATIONS AT SEMICONDUCTOR-METAL TRANSITION
    LAZAREV, VB
    SHEVCHENKO, VJ
    MATERIALS RESEARCH BULLETIN, 1978, 13 (12) : 1351 - 1358
  • [23] Semiconductor-metal and metal-semiconductor transitions in twisting graphene nanoribbons
    Xu, Ning
    Huang, Bolong
    Li, Jianfu
    Wang, Baolin
    SOLID STATE COMMUNICATIONS, 2015, 202 : 39 - 42
  • [24] Critical conductivity for semiconductor-metal alloys
    Castner, TG
    PHYSICA B, 2000, 284 : 1679 - 1681
  • [25] OPTICAL EFFECTS AT SEMICONDUCTOR-METAL TRANSITION
    AGRANOVICH, VM
    LOZOVIK, YE
    FIZIKA TVERDOGO TELA, 1975, 17 (08): : 2437 - 2438
  • [26] Excitonic Resonance in Semiconductor-Metal Nanohybrids
    Climente, Juan I.
    Movilla, Jose L.
    Goldoni, Guido
    Planelles, Josep
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (32): : 15868 - 15874
  • [27] INTERCHANGEABILITY IN PHOTOSENSITIVE SYSTEMS SEMICONDUCTOR-METAL
    KOSTYSHIN, MT
    KRASNOZH.EP
    ROMANENK.PF
    ZHURNAL NAUCHNOI I PRIKLADNOI FOTOGRAFII, 1971, 16 (03): : 199 - +
  • [28] Hybrid semiconductor-metal nanoparticles as photocatalysts
    Banin, Uri
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 254
  • [29] SURFACE HELICONS AT A SEMICONDUCTOR-METAL INTERFACE
    BELETSKII, NN
    YAKOVENKO, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 965 - 966
  • [30] SEMICONDUCTOR-METAL INTERFACIAL REACTION.
    Hiraki, Akio
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 36 - 54
12345