High transconductance AlGaN/GaN HEMT growth on sapphire substrates

被引：0
|
作者：
Xiao, Dongping [1 ]
Liu, Jian [1 ]
Wei, Ke [1 ]
He, Zhijing [1 ]
Liu, Xinyu [1 ]
Wu, Dexin [1 ]
机构：
[1] Compound Semi-conduct. Devices Lab., Microelectronics R and D Ctr., Chinese Acad. of Sci., Beijing 100029, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2003年 / 24卷 / 09期
关键词：
Hitoshi Neda; Terri Henkel; and Rytas Vilgalys provided specimens for this study. Gary Samuels is thanked for relaying information from Kuntze's (1898) publication; and Uwe Braun; Walter Gams; and Dick Korf for discussion of the lectotypification ofFavolaschia. The curator of PC and E. Langer are thanked for the loan of specimens from Madagascar and Reunion Island. Brian Spooner (Kew) and Barbara Thiers (NYBG) are thanked for assistance in trying to track down Massee's specimen ofFavolaschia thwaitesii from New Zealand. The New Zealand Department of Conservation provided permits to allow the collection of specimens from national parks and reserves. This research was funded by the New Zealand Foundation for Research; Science and Technology. Stephen Whitton was supported by a Landcare Research Hayward Fellowship. James Johnson was supported by aA.W. Mellon Postdoctoral Fellowship at Duke University. Jean-Marc Moncalvo was supported from grants from the US National Science Foundation; Systematic and Population Biology Program; and from the Royal Ontario Museum Foundation for Collections and Research;
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页码：907 / 911
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