High transconductance AlGaN/GaN HEMT growth on sapphire substrates

被引：0
|
作者：
Xiao, Dongping [1 ]
Liu, Jian [1 ]
Wei, Ke [1 ]
He, Zhijing [1 ]
Liu, Xinyu [1 ]
Wu, Dexin [1 ]
机构：
[1] Compound Semi-conduct. Devices Lab., Microelectronics R and D Ctr., Chinese Acad. of Sci., Beijing 100029, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2003年 / 24卷 / 09期
关键词：
Hitoshi Neda; Terri Henkel; and Rytas Vilgalys provided specimens for this study. Gary Samuels is thanked for relaying information from Kuntze's (1898) publication; and Uwe Braun; Walter Gams; and Dick Korf for discussion of the lectotypification ofFavolaschia. The curator of PC and E. Langer are thanked for the loan of specimens from Madagascar and Reunion Island. Brian Spooner (Kew) and Barbara Thiers (NYBG) are thanked for assistance in trying to track down Massee's specimen ofFavolaschia thwaitesii from New Zealand. The New Zealand Department of Conservation provided permits to allow the collection of specimens from national parks and reserves. This research was funded by the New Zealand Foundation for Research; Science and Technology. Stephen Whitton was supported by a Landcare Research Hayward Fellowship. James Johnson was supported by aA.W. Mellon Postdoctoral Fellowship at Duke University. Jean-Marc Moncalvo was supported from grants from the US National Science Foundation; Systematic and Population Biology Program; and from the Royal Ontario Museum Foundation for Collections and Research;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
页码：907 / 911
相关论文
共 50 条
  • [1] High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate
    Okita, H
    Kaifu, K
    Mita, J
    Yamada, T
    Sano, Y
    Ishikawa, H
    Egawa, T
    Jimbo, T
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (01): : 187 - 190
  • [2] High Transconductance on AlGaN/GaN HEMT on (110) Silicon Substrate
    Gerbedoen, J-C
    Soltani, A.
    De Jaeger, J-C
    Yvon, Cordier
    [J]. 2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 413 - 416
  • [3] Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates
    Fieger, M
    Dikme, Y
    Jessen, F
    Kalisch, H
    Noculak, A
    Szymakowski, A
    Von Gemmern, P
    Faure, B
    Richtarch, C
    Letertre, F
    Heuken, M
    Jansen, RH
    [J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2607 - 2610
  • [4] Growth and characterisation of AlGaN/GaN HEMT on silicon substrates
    Kalisch, H
    Dikme, Y
    Gerstenbrandt, G
    Alam, A
    Szymakowski, A
    Klockenhoff, H
    Rieckmann, C
    Heuken, M
    Jansen, RH
    Javorka, P
    Marso, M
    Fox, A
    Kordos, P
    Lüth, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02): : 464 - 467
  • [5] Influence of ohmic contact resistance on transconductance in AlGaN/GaN HEMT
    Hirose, Yoshikazu
    Honshio, Akira
    Kawashima, Takeshi
    Iwaya, Motoaki
    Kamiyama, Satoshi
    Tsuda, Michinobu
    Amano, Hiroshi
    Akasaki, Isamu
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (07): : 1064 - 1067
  • [6] A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage
    Chen, Dingbo
    Liu, Zhikun
    Liang, Jinghan
    Wan, Lijun
    Xie, Zhuoliang
    li, Guoqiang
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (39) : 12075 - 12079
  • [7] AlGaN/GaN HEMT on sapphire using FC bonding
    Chen, Xiaojuan
    Liu, Xinyu
    Shao, Gang
    Liu, Jian
    He, Zhijing
    Wang, Suofa
    Wu, Dexin
    [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2005, 26 (05): : 990 - 993
  • [8] High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
    Chen, Q
    Yang, JW
    Kahn, MA
    Ping, AT
    Adesida, I
    [J]. ELECTRONICS LETTERS, 1997, 33 (16) : 1413 - 1415
  • [9] Growth of high-quality AlN, GaN and AlGaN with atomically smooth surfaces on sapphire substrates
    Ohba, Y
    Yoshida, H
    Sato, R
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A): : L1565 - L1567
  • [10] Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
    Mukhopadhyay, Partha
    Banerjee, Utsav
    Bag, Ankush
    Ghosh, Saptarsi
    Biswas, Dhrubes
    [J]. SOLID-STATE ELECTRONICS, 2015, 104 : 101 - 108
12345