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- [2] HYDROGEN INCORPORATION SCHEME IN a-Si1 - xCx:H. Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (11): : 1915 - 1917
- [3] Morphological and structural modifications induced in a-Si1−xCx:H films by excimer laser annealing Applied Physics A, 2010, 100 : 1163 - 1168
- [5] PREPARATION OF a-Si:H/a-Si1 - xCx:H SUPERLATTICES. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (08): : 1141 - 1143
- [6] Annealing behavior of light-induced metastable defects in a-Si1−xCx : H Journal of Materials Science: Materials in Electronics, 2003, 14 : 739 - 740
- [7] Study of the composition, structure, and optical properties of a-Si1 − xCx:H〈Er〉 films erbium doped from the Er(pd)3 complex compound Semiconductors, 2013, 47 : 376 - 382
- [8] Modification magnetron sputtered a-Si1-xCx:H films by implantation of Sn+ ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 243 - 248
- [9] Modification of magnetron sputtered a-Si1-xCx:H films by implantation of Ge+ NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 112 (1-4): : 342 - 347
- [10] MAGNETIC PROPERTIES OF FE-SI-AL SPUTTERED FILMS. IEEE translation journal on magnetics in Japan, 1988, 3 (02): : 180 - 186