Numerical analysis of substrate temperature distribution in diamond film growth by hot-filament chemical vapor deposition

被引：0
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作者：
Qi, Xuegui [1 ]
Chen, Zeshao [1 ]
Wang, Guanzhong [1 ]
机构：
[1] Sch. of Eng. Sci., Univ. of Sci. and Technol. of China, Hefei 230027, China
来源：
| 2002年 / Science Press卷 / 22期
关键词：
Chemical vapor deposition - Heat transfer - Numerical analysis - Substrates - Temperature distribution;
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学科分类号：
摘要：
Irradiation of the hot filament significantly affects the surface temperature distribution, or temperature field of the substrates, in the diamond film growth by hot filament chemical vapor deposition (HFCVD). The substrate temperature distribution and the radiation density distribution were numerically analyzed with consideration given to the lateral heat conduction of the substrates. The results show that lateral heat conduction improves the uniformity of the substrate temperature distribution. The influence of various factors, such as temperature of the surroundings, filament height, filament number and their spacing, etc., on the distributions of irradiation and temperature were also discussed. Geometry and position of the filament were optimized to ensure a uniform temperature distribution for a 8 cm×8 cm silicon substrate on the basis of our numerical calculation.
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