ANNEALING OF RADIATION DEFECTS IN A GALLIUM PHOSPHIDE SINGLE CRYSTAL.

The kinetics of annealing of radiation defects in GaP single crystals irradiated with zinc ions was investigated by determining the absorption of light in the implantation-doped layer as a function of the annealing temperature and duration. The measurements were carried out using an MV-MVI electronic spectrophotometer. Samples of n-type gallium phosphide were irradiated at room temperature using an ion-beam unit with magnetic field separation. The surface of a sample was scanned by the ion beam in order to ensure a uniform distribution of the impurity. The ion-current density did not exceed 0. 5 mu A/cm**2. Samples were annealed in silicone oil.