LOW-TEMPERATURE ANNEALING OF RADIATION DEFECTS IN ELECTRON-IRRADIATED GALLIUM-PHOSPHIDE

Czochralski-grown single-crystal n-GaP samples were irradiated with a fluence φ = 4×1016 cm-2 of 12 MeV electrons at 77 ± 0.5 K. The irradiated samples were annealed isochronally with a period of 10 min up to 300 K. The optical and electrical measurements were carried out at 77 K. The defects introduced by electron irradiation, result in different changes of the optical and electrical properties, exhibiting an almost complete restoration of the initial optical absorption of the sample annealed to 300K, while a negative annealing of the conductance is observed.