Influence of preamorphized implantation on silicon p+n junction properties

Shallow p+ n junction have been fabrication by Si+/B+, Ar+/B+ dual implant, in combination with rapid thermal annealing (RTA). The effect of Si+ or Ar+ preamorphized implantation was studied. the results showed that the Si+ preamorphized implantation under suitable implant condition can effectively inhibit the boron channelling effect, which can make good thin p+ layer with high boron electrical active rates and little residual secondary defects. The p+n diodes fabricated by Si+/B+ dual implant show excellent I-V characteristics with the reverse leakage current density of 2.0 nA/cm2 at -1.4 V. But it can result in the lower boron electrical active rates, more residual secondary defects and poor electrical p+ thin layers.