Improved method for lateral profiling of interface traps and oxide charge in MOSFET devices

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作者：
Melik-Martirosian, Ashot [1 ]
Ma, T.P. [1 ]
机构：
[1] Yale Univ, New Haven, United States
来源：
International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 1999年
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页码：90 / 93
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