FABRICATION OF POWER SEMICONDUCTOR DEVICES.

被引：0

作者：

Tuchkevich, V.M.

Tepman, I.A.

Kovalev, F.I.

Yakivchik, N.I.

机构：

来源：

Soviet electrical engineering | 1980年 / 51卷 / 01期

关键词：

714 Electronic Components and Tubes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

下载

页码：67 / 75

共 50 条

[1] AUTOMATING THE DESIGN OF POWER SEMICONDUCTOR DEVICES.
Grigorenko, V.P.
Kuz'min, V.L.
Bazanov, O.V.
Soviet electrical engineering, 1984, 55 (07): : 53 - 58
[2] Cooling and Mounting of Power Semiconductor Devices.
Wetzel, Peter
Elektronik Munchen, 1980, (08): : 97 - 104
[3] AUTOMATING THE PRODUCTION OF POWER SEMICONDUCTOR DEVICES.
Kyuts, R.V.
Toomsoo, G.K.
Soviet electrical engineering, 1984, 55 (04): : 44 - 51
[4] Evaluation of Current Capacity of Power Semiconductor Devices.
Lehmann, Erhard
Elektrotechnische Zeitschrift Ausgabe B, 1974, 26 (17): : 426 - 428
[5] THERMOSTAT FOR LOW-POWER SEMICONDUCTOR DEVICES.
Kluikov, A.G.
Lebedev, V.M.
1978, 45 (10): : 634 - 635
[6] High power devices. Fabrication technology and developments
Jacobson, D.M.
Humpston, G.
Metals and materials Bury St Edmunds, 1991, 7 (12): : 733 - 739
[7] FABRICATION OF TENTH-MICRON SCALE STRUCTURES FOR SEMICONDUCTOR LASER DEVICES.
Fice, M.J.
Ahmed, H.
Clements, S.J.
Microelectronic Engineering, 1987, 6 (1-4) : 189 - 194
[8] POWER DEVICES.
Anon
Electronic Engineering (London), 1987, 59 (727): : 48 - 68
[9] High-power semiconductor devices. Review and comparative assessment
Linder S.
Russian Electrical Engineering, 2007, 78 (10) : 509 - 514
[10] Investigation of Thermal States of High-power Semiconductor Devices.
Staszak, Zbigniew
Gulczynski, Janusz
Elektronika Warszawa, 1980, 21 (11): : 25 - 27