Modeling growth in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4

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Hirose, F.
Sakamoto, H.
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Microelectronic Engineering | 1998年 / 43-44卷
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We have modeled SiGe growth with gas-source molecular beam epitaxy using Si2H6 and GeH4. The model is described by a combination of Si2H6 and GeH4 adsorptions and hydrogen desorption. The Si2H6 and GeH4 adsorptions are two-site and four-site adsorption processes respectively. The hydrogen desorption is a first order reaction. The model allows predictions of substrate-temperature dependencies of SiGe growth rate and surface-hydrogen coverage in the wide temperature range of 450-700°C. © 1998 Elsevier Science B.V. All rights reserved.
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页码：635 / 640
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