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MEMORIES.
被引:0
|作者:
Posa, John G.
机构:
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关键词:
MEMORY PROGRAMMING ELEMENTS - MEMORY REDUNDANCY;
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摘要:
A redundancy feature incorporated in large semiconductor memories as a cure for some yield problems is investigated. For each memory type that now incorporates redundancy there is a corresponding version of that chip from another vender who maintains that the feature is unnecessary. There is, however, almost unanimous agreement that redundancy is an absolute must for 256-K RAM. Electrical fuses and laser targets, two programming elements for removing bad memory cells are presented. The use of more than one redundancy programming method at a time, depending upon the type of device, is also discussed.
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页码:130 / 134
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