MEMORIES.

被引:0
|
作者
Posa, John G.
机构
来源
Electronics | 1981年 / 54卷 / 21期
关键词
MEMORY PROGRAMMING ELEMENTS - MEMORY REDUNDANCY;
D O I
暂无
中图分类号
学科分类号
摘要
A redundancy feature incorporated in large semiconductor memories as a cure for some yield problems is investigated. For each memory type that now incorporates redundancy there is a corresponding version of that chip from another vender who maintains that the feature is unnecessary. There is, however, almost unanimous agreement that redundancy is an absolute must for 256-K RAM. Electrical fuses and laser targets, two programming elements for removing bad memory cells are presented. The use of more than one redundancy programming method at a time, depending upon the type of device, is also discussed.
引用
收藏
页码:130 / 134
相关论文
共 50 条