Analysis of hot-carrier degradation in small and large W/L n-channel transistors

被引：0
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作者：
Bendada, E. [1 ]
Rais, K. [1 ]
机构：
[1] Universute My Ismail-F.S.T., Errachidia, Morocco
来源：
Active and Passive Electronic Components | 1998年 / 21卷 / 03期
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页码：189 / 198
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