NOISE ASSOCIATED WITH SUBSTRATE CURRENT IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS.

被引：0
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作者：
Jindal, J.P. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 06期
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摘要：
12
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页码：1047 / 1052
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