Optical absorption edge and some shallow donor levels in LiNbO3 systems

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作者：
Corradi, G. [1 ]
Kovács, L. [1 ]
Zaritskii, I.M. [2 ,3 ]
机构：
[1] Crystal Physics Laboratory, Res. Inst. Solid State Phys. Opt., Hungarian Academy of Sciences, P.O. Box 49, Budapest, H-1525, Hungary
[2] Institute of Semiconductor Physics, Ukrainian Natl. Academy of Sciences, 252650 Kiev, Ukraine
[3] VEECO Instruments Inc., 1 Terminal Drive, Plainview, NY 11803, United States
来源：
Radiation Effects and Defects in Solids | 1999年 / 150卷 / 1 -4 pt 2期
关键词：
Band structure - Charge transfer - Crystal impurities - Electron energy levels - Light absorption - Stoichiometry - Ultraviolet radiation;
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摘要：
In LiNbO3 the position of the conduction band edge formed by Nb 4d states strongly depends on the presence of antisite niobiums (Nb on Li site) lowering the band edge. Based on this property the measurement of the UV absorption edge can be used for determining the Li/Nb ratio in the crystal with high precision, especially in the near-stoichiometric region where the relative precision is 0.01 mol%. The same Nb states can form shallow donor levels due to nearby impurities and/or the polaron effect. Charge transfer processes between Nb5+/4+ polaron and Ti4+/3+ shallow donor levels and Jahn-Teller effects of the involved d1 paramagnetic states have been observed in reduced LiNbO3:Mg:Ti and are compared with literature results in LiNbO3:Ti.
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