a-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition technique

被引:0
|
作者
Inst of Electronic Technology, Moscow, Russia [1 ]
机构
来源
J Non Cryst Solids | / Pt 2卷 / 1123-1126期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] a-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition technique
    Budaguan, BG
    Sherchenkov, AA
    Chernomordic, VD
    Biriukov, AV
    Ljungberg, LY
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 1123 - 1126
  • [2] High-rate deposition of a-Si:H films in 55kHz glow discharge:: Growth mechanisms and film structure
    Budaguan, BG
    Aivazov, AA
    Sazonov, AY
    Popov, AA
    Berdnikov, AE
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 585 - 590
  • [3] The properties of a-Si:H/c-Si heterostructures prepared by 55 kHz PECVD for solar cell application
    Budaguan, BG
    Aivazov, AA
    Sherchenkov, AA
    Biriukov, AV
    Chernomordic, VD
    Metselaar, JW
    THIN-FILM STRUCTURES FOR PHOTOVOLTAICS, 1998, 485 : 303 - 308
  • [4] The application of low-frequency glow discharge to high-rate deposition of a-Si:H
    Budaguan, BG
    Popov, AA
    Sazonov, AY
    Bosyakov, MN
    Grunsky, DI
    Zhuk, DW
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 39 - 42
  • [5] The application of low-frequency glow discharge to high-rate a-Si:H deposition
    Budaguan, BG
    Sazonov, AY
    Aivazov, AA
    Berdnikov, AE
    Popov, AA
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 643 - 646
  • [6] Application of low-frequency glow discharge to high-rate deposition of a-Si:H
    Moscow Inst of Electronic Technology, , Moscow, Russia
    J Non Cryst Solids, Pt A (39-42):
  • [7] A recombination model for a-Si:H/c-Si heterostructures
    Leendertz, C.
    Stangl, R.
    Schulze, T. F.
    Schmidt, M.
    Korte, L.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1005 - 1010
  • [8] Electronic states in a-Si:H/c-Si heterostructures
    Korte, L.
    Laades, A.
    Schmidt, M.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1217 - 1220
  • [9] Spectral characteristics of a-Si:H/c-Si heterostructures
    Gall, S
    Hirschauer, R
    Kolter, M
    Braunig, D
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 157 - 162
  • [10] IMPACT OF ANNEALING ON PASSIVATION OF a-Si:H/c-Si HETEROSTRUCTURES
    De Wolf, Stefaan
    Fujiwara, Hiroyuki
    Kondo, Michio
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 2037 - 2040