Fabrication and morphology of porous p-type SiC

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[1] [1,Shishkin, Y.
[2] Ke, Y.
[3] Devaty, R.P.
[4] Choyke, W.J.
来源：
Shishkin, Y. (shishkin@eng.usf.edu) | 1600年 / American Institute of Physics Inc.卷 / 97期
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We acknowledge the DURINT Program (ONR Grant No. N00014-01-1-0715) for supporting this research. We also thank II-VI; Inc. for the chemical-mechanical polishing;
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