Optically transparent 6H-silicon carbide

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作者：
St.-Petersburg Electrotechnical Univ, St.-Petersburg, Russia [1 ]
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来源：
Mater Sci Forum | / pt 1卷 / 53-56期
关键词：
Cathodoluminescence - Crystal growth - Current voltage characteristics - Energy gap - Light absorption - Light measurement - Light reflection - Optical microscopy - Silicon carbide - Sublimation - Transparency - X ray crystallography;
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摘要：
Cathodoluminescence (surface mapping and spectroscopy), IR absorption/reflection spectroscopy, CV-characteristics, X-ray topography and optical microscopy have been employed for investigations of the 6H-SiC crystals grown by sublimation method and results of the investigations are compared. Measurement of the IR absorption could be employed as an express method of the evaluation of Nd-Na values in SiC samples with Nd-Na lower than 1018 cm-3.
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