Lifetime identification of thermal oxidation process induced contamination in silicon wafers

被引：0
|
作者：
Showa Denko K.K, Saitama, Japan [1 ]
机构：
来源：
Materials Science Forum | 1995年 / 196-201卷 / pt 4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1817 / 1822
相关论文
共 50 条
  • [1] Lifetime identification of thermal oxidation process induced contamination in silicon wafers
    Daio, H
    Yakushiji, K
    Buczkowski, A
    Shimura, F
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1817 - 1821
  • [2] DEFORMATION OF SILICON-WAFERS BY THERMAL-OXIDATION
    HABERMEIER, HU
    ALT, HC
    TAPFER, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : 1445 - 1446
  • [3] DEFORMATION OF SILICON-WAFERS BY THERMAL-OXIDATION
    YORIUME, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2076 - 2081
  • [4] Behavior of metal-induced oxide charge during thermal oxidation in silicon wafers
    Shimizu, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (12) : 4335 - 4340
  • [5] Influences and Diffusion Effects of Lithium Contamination during the Thermal Oxidation Process of Silicon
    Wandesleben, Annika F.
    Truffier-Boutry, Delphine
    Glowacki, Frederique
    Royer, Agnes
    Lederer, Maximilian
    Lilienthal-Uhlig, Benjamin
    Vogt, Carla
    ADVANCED ENGINEERING MATERIALS, 2024, 26 (13)
  • [6] PROCESS-INDUCED DISTORTION IN SILICON WAFERS
    YAU, LD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) : 1299 - 1305
  • [7] Iron contamination in silicon wafers measured with the pulsed MO capacitor generation lifetime technique
    Tan, SE
    Schroder, DK
    Kohno, M
    Miyazaki, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (12) : 2392 - 2398
  • [8] Key influence of the thermal history on process-induced defects in Czochralski silicon wafers
    Kissinger, G
    Graf, D
    Lambert, U
    Grabolla, T
    Richter, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) : 933 - 937
  • [9] DEFORMATION OF SILICON-WAFERS BY THERMAL-OXIDATION - REPLY
    YORIUME, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : 1446 - 1446
  • [10] Gettering and lifetime engineering in silicon wafers
    Martinuzzi, S
    Palais, O
    HIGH PURITY SILICON VII, PROCEEDINGS, 2002, 2002 (20): : 233 - 248
12345