Inclusion of strain effect in miscibility gap calculations for III-V semiconductors

被引：0

作者：

Schlenker, Dietmar ^{[1
]}

Miyamoto, Tomoyuki ^{[1
]}

Chen, Zhibiao ^{[1
]}

Kawaguchi, Masao ^{[1
]}

Kondo, Takashi ^{[1
]}

Gouardes, Eric ^{[1
]}

Gemmer, Jochen ^{[1
,2
]}

Gemmer, Christian ^{[1
,3
]}

Koyama, Fumio ^{[1
]}

Iga, Kenichi ^{[1
]}

机构：

[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

[2] Inst. für Theoretische Physik I, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany

[3] Inst. für Phys. Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 10期

关键词：

Approximation theory - Crystal orientation - Energy gap - Gibbs free energy - Inclusions - Mathematical models - Solubility - Strain - Substrates - Temperature;

D O I：

10.1143/jjap.39.5751

中图分类号：

学科分类号：

摘要：

A new and simple treatment of miscibility gap calculations for ternary and quaternary semiconductors including strain is presented. Our treatment leads to the same result as that of previous treatments, in the case of lattice-matched layers, but provides a more realistic and rigorous description for coherently strained layers. We also discuss the differences between our treatment and previous treatments, including misfit strain caused by the substrate. Our treatment is applied in miscibility gap calculations for GaInNAs and GaInAsSb material systems. Theoretical predictions by miscibility gap calculations are compared with growth experiments and show reasonable agreement.

引用

页码：5751 / 5757

共 50 条

[1] Inclusion of strain effect in miscibility gap calculations for III-V semiconductors
Schlenker, D
Miyamoto, T
Chen, ZB
Kawaguchi, M
Kondo, T
Gouardes, E
Gemmer, J
Gemmer, C
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (10): : 5751 - 5757
[2] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS
KUO, CP
VONG, SK
COHEN, RM
STRINGFELLOW, GB
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5428 - 5432
[3] Absorption limit in direct gap III-V semiconductors
Bhowmick, Mithun
Xi, Haowen
Ullrich, Bruno
JOURNAL OF APPLIED PHYSICS, 2023, 134 (01)
[4] Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors
Mondal B.
Kröner M.
Hepp T.
Volz K.
Tonner-Zech R.
Physical Review B, 2023, 108 (03)
[5] Antisites in III-V semiconductors: Density functional theory calculations
Chroneos, A.
Tahini, H. A.
Schwingenschloegl, U.
Grimes, R. W.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (02)
[6] The effect of clustering on the melting of III-V semiconductors
Bulyarskii, SV
L'vov, PE
Svetukhin, VV
TECHNICAL PHYSICS, 2001, 46 (09) : 1076 - 1081
[7] RABI OSCILLATIONS IN DIRECT-GAP III-V SEMICONDUCTORS
SEN, P
ANDREWS, JT
SOLID STATE COMMUNICATIONS, 1995, 95 (02) : 117 - 120
[8] The effect of clustering on the melting of III-V semiconductors
S. V. Bulyarskii
P. E. L’vov
V. V. Svetukhin
Technical Physics, 2001, 46 : 1076 - 1081
[9] Memory effect of Ge in III-V semiconductors
Welser, E.
Guter, W.
Wekkeli, A.
Dimroth, F.
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4799 - 4802
[10] BAND-GAP NARROWING IN NOVEL III-V SEMICONDUCTORS
JAIN, SC
MCGREGOR, JM
ROULSTON, DJ
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3747 - 3749

← 1 2 3 4 5 →