Absorption limit in direct gap III-V semiconductors

被引：0
|
作者：
Bhowmick, Mithun [1 ]
Xi, Haowen [2 ]
Ullrich, Bruno [3 ]
机构：
[1] Miami Univ, Dept Math & Phys Sci, Middletown, OH 45042 USA
[2] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA
[3] Ullrich Photon LLC, Manistique, MI 49854 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2023年 / 134卷 / 01期
关键词：
Compound semiconductors - Device application - Effective electron densities - III/V semiconductors - Optoelectronics devices - Saturation parameters;
D O I：
10.1063/5.0158120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The comparison of experimentally found absorption limits, and their variations in compound semiconductors, with theoretical expectations was never a particularly studied subject, although absorption limits in semiconductors could be critical to certain optoelectronic device applications. We introduce a model, which accurately fits the distinct absorption saturation parameter linked to the effective electron density of states.
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页数：4
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