Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

被引：0
|
作者：
Tsybeskov, L. [1 ]
Montes, L. [1 ]
Grom, G.F. [1 ]
Krishnan, R. [1 ]
Fauchet, P.M. [1 ]
White Jr., B. [1 ]
机构：
[1] Univ of Rochester, Rochester, NY, United States
来源：
Annual Device Research Conference Digest | 2000年
关键词：
D O I：
10.1109/drc.2000.877085
中图分类号：
学科分类号：
摘要：
Electron tunneling
引用
收藏
页码：53 / 54
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