IMPROVED METHOD FOR FABRICATING ION-EXCHANGED WAVEGUIDES THROUGH ELECTROLYTIC RELEASE OF SILVER IONS.
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作者:
Najafi, S.Iraj
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Univ of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USAUniv of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USA
Najafi, S.Iraj
[1
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Ramaswamy, Ramu V.
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Univ of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USAUniv of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USA
Ramaswamy, Ramu V.
[1
]
Lagu, Rajendra K.
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Univ of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USAUniv of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USA
Lagu, Rajendra K.
[1
]
机构:
[1] Univ of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USA
An improved technique for electrolytic release of silver ions while fabricating Na** plus Ag** plus exchanged glass waveguides is reported. In this method, a porous glass shell such as fritted glass is used around the cathode to prevent the reduction of the released silver ions. The content of the fritted glass and Pt-cathode deposits as well as the molten salt bath is analyzed using atomic fluorescence spectroscopy and atomic emission spectroscopy. Possible reaction mechanisms that explain the results of the concentration analysis are outlined. Through this work, it is shown that use of a porous glass shell such as a fritted glass bulb prevents the reduction of Ag** plus , and is therefore necessary for online concentration control during the fabrication of ion-exchanged glass waveguides.
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Zhang, Ya Li
Zhu, Ning Hua
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Zhu, Ning Hua
Wen, Ji Min
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Wen, Ji Min
Pun, E. Y. B.
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City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Pun, E. Y. B.
Chung, P. S.
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City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China