Transfer characteristic and response rate of a threshold p-i-n avalanche photodiode for a short-pulse exposure

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作者：
Kurochkin, N.E. [1 ]
Kholodnov, V.A. [1 ]
机构：
[1] Orion Sci. Mfg. Organization, State Sci. Ctr. the Russ. Federation, Moscow, Russia
来源：
Journal of Optical Technology (A Translation of Opticheskii Zhurnal) | 1996年 / 63卷 / 06期
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摘要：
This paper presents an analytical treatment of the photoresponse of a threshold avalanche photodiode of the p-i-n type to a pulsed exposure with a δ-time dependence when the electron and hole multiplication factors are approximately identical. A relationship is obtained between the response time of the device and the photocarrier multiplication factor at constant current. © 1996 The Optical Society of America.
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页码：455 / 458
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