Characterization of a-Si:H P-I-N photodiode response

The a-Si:H p-i-n photodiode response due to simultaneous voltage and light pulses has a characteristic shape similar as that of retinal layers response. The characteristic shape of photodiode response, ascribed to trap states, is analyzed and discussed. The amplitude, waveform, latency and threshold voltages of the a-Si:H p-i-n photodiode responses were analyzed in dependence of voltage pulse amplitude and voltage and light pulses duration. The simultaneous stimuli influence on photodiode response has been explained through the excitation of dangling bond in i-layer. Described photodiode response behaviour suggests potential of development of a method for defect characterization and use of a-Si:H p-i-n PD as image sensor.