Molecular beam epitaxy growth of GaAs buffer at low temperature

被引：0
|
作者：
Liang, Jiben [1 ]
Kong, Meiying [1 ]
Wang, Zhangui [1 ]
Zhu, Zhanping [1 ]
Duan, Wensin [1 ]
Wang, Chunyan [1 ]
Zhang, Xueyuan [1 ]
Zeng, Yiping [1 ]
机构：
[1] Inst of Semiconductors, Academia Sinica, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1993年 / 14卷 / 12期
关键词：
Semiconductor materials;
D O I：
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学科分类号：
摘要：
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页码：768 / 770
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