Threshold-voltage model of MOSFET devices with localized interface charge

被引:0
|
作者
Natl Chiao-Tung Univ, Hsin-Chu, Taiwan [1 ]
机构
来源
IEEE Trans Electron Devices | / 3卷 / 441-447期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Threshold-voltage balance for minimum supply operation
    Ono, G
    Miyazaki, M
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (05) : 830 - 833
  • [42] Compact threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices
    Kuo, JB
    Yuan, KH
    Lin, SC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (01) : 190 - 196
  • [43] Modeling of charge trapping induced threshold-voltage instability in high-κ gate dielectric FETs
    Liu, Yang
    Shanware, Ajit
    Colombo, Luigi
    Dutton, Robert
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (06) : 489 - 491
  • [44] A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Charges
    Chiang, Te-Kuang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (02) : 567 - 571
  • [45] Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses
    Djezzar, B
    Smatti, A
    Amrouche, A
    Kechouane, M
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 1872 - 1878
  • [46] Effect of SiC power DMOSFET threshold-voltage instability
    Lelis, A. J.
    Habersat, D.
    Green, R.
    Ogunniyi, A.
    Gurfinkel, M.
    Suehle, J.
    Goldsman, N.
    SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 215 - +
  • [47] A UHF Voltage Multiplier Circuit Using a Threshold-Voltage Cancellation Technique
    Feldengut, Tobias
    Kokozinski, Rainer
    Kolnsberg, Stephan
    PRIME: PROCEEDINGS OF THE CONFERENCE 2009 PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS, 2009, : 288 - 291
  • [48] Threshold voltage of MOSFET devices extracted by normalized mutual integral difference operator
    He, J
    Zheng, TL
    Zhang, X
    Wang, YY
    CHINESE JOURNAL OF ELECTRONICS, 2003, 12 (02): : 273 - 275
  • [49] An accurate threshold voltage model for nanoscale GCGS VSG MOSFET
    Abdelmalek, N.
    Djeffal, F.
    Abdi, M. A.
    Arar, D.
    2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009), 2009, : 244 - +
  • [50] An analytical model of MOSFET threshold voltage with considiring the quantum effects
    Dai, YH
    Chen, JN
    Ke, DM
    Sun, JE
    ACTA PHYSICA SINICA, 2005, 54 (02) : 897 - 901