Fabrication and characterization of Coulomb blockade devices in silicon

被引:0
|
作者
Institut für Angewandte Physik, Universität Tübingen, Auf der Morgenstelle 10, D-72076 Tübingen, Germany [1 ]
机构
来源
Microelectron Eng | / 1卷 / 141-144期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Fabrication and characterisation of Coulomb blockade devices in silicon
    Augke, R
    Eberhardt, W
    Strähle, S
    Prins, FE
    Kern, DP
    MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 141 - 144
  • [2] Capacitance measurements in nanometric silicon devices using Coulomb blockade
    Hofheinz, M.
    Jehl, X.
    Sanquer, M.
    Cueto, O.
    Molas, G.
    Vinet, M.
    Deleonibus, S.
    SOLID-STATE ELECTRONICS, 2007, 51 (04) : 560 - 564
  • [3] Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots
    J. Sée
    P. Dollfus
    S. Galdin-Retailleau
    P. Hesto
    Journal of Computational Electronics, 2003, 2 : 449 - 453
  • [4] Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots
    See, J.
    Dollfus, P.
    Galdin-Retailleau, S.
    Hesto, P.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 449 - 453
  • [5] Fabrication of self-aligned metallic Coulomb blockade devices on Si nanowires
    Ford, EM
    Ahmed, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3800 - 3803
  • [6] Coulomb blockade in silicon nanostructures
    Tilke, AT
    Simmel, FC
    Blick, RH
    Lorenz, H
    Kotthaus, JP
    PROGRESS IN QUANTUM ELECTRONICS, 2001, 25 (03) : 97 - 138
  • [7] Coulomb blockade in a silicon MOSSET
    AbuschMagder, D
    Kastner, MA
    Dennis, CL
    Dinatale, WF
    Lyszczarz, TM
    Shaver, DC
    Mankiewich, PM
    QUANTUM TRANSPORT IN SEMICONDUCTOR SUBMICRON STRUCTURES, 1996, 326 : 251 - 260
  • [8] Fabrication and characterization of porous silicon on crystalline silicon based devices
    Fonthal, F.
    Trifonov, T.
    Rodriguez, A.
    Goyes, C.
    Vilanova, X.
    Pallares, J.
    CERMA 2007: ELECTRONICS, ROBOTICS AND AUTOMOTIVE MECHANICS CONFERENCE, PROCEEDINGS, 2007, : 170 - +
  • [9] Design optimization of Coulomb blockade devices
    Müller, HO
    Williams, DA
    Mizuta, H
    VLSI DESIGN, 2001, 13 (1-4) : 193 - 198
  • [10] Fabrication and characterization of metal-molecule-silicon devices
    Scott, Adina
    Janes, David B.
    Risko, Chad
    Ratner, Mark A.
    APPLIED PHYSICS LETTERS, 2007, 91 (03)