EFFECT OF HYDROGEN DILUTION ON STRUCTURE OF a-Si:H PREPARED BY SUBSTRATE IMPEDANCE TUNING TECHNIQUE.

被引:0
|
作者
Matsuo, Shinji [1 ]
Ueda, Masato [1 ]
Imura, Takeshi [1 ]
Osaka, Yukio [1 ]
机构
[1] Hiroshima Univ, Higashi-Hiroshima, Jpn, Hiroshima Univ, Higashi-Hiroshima, Jpn
关键词
D O I
暂无
中图分类号
学科分类号
摘要
15
引用
收藏
页码:475 / 479
相关论文
共 50 条
  • [41] Role of hydrogen dilution in a-Si:H p-i-n solar cells stability
    Wang, Q
    Xu, YQ
    Crandall, RS
    13TH NREL PHOTOVOLTAICS PROGRAM REVIEW, 1996, (353): : 473 - 480
  • [42] Effect of mechanical stress on the performance of an a-Si:H TFT on plastic substrate
    Won, SH
    Lee, CB
    Hur, JH
    Jang, J
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S685 - S687
  • [43] The effect of hydrogen dilution on the structure of a-C:H
    Walters, JK
    Newport, RJ
    Parker, SF
    Howells, WS
    Bushnell-Wye, G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (19) : 4161 - 4176
  • [44] Gated-four-probe a-Si:H TFT structure: A new technique to measure the intrinsic performance of a-Si:H TFT
    Chen, CY
    Kanicki, J
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) : 340 - 342
  • [45] Photovoltaic effect in a-Si/c-Si heterostructure prepared by rf magnetron sputtering technique
    Budaguan, BG
    Sherchenkov, AA
    Aivazov, AA
    THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 : 65 - 70
  • [46] The structure of dangling bonds having hydrogen at a nearby site in a-Si:H
    Morigaki, K
    Hikita, H
    Yamaguchi, M
    Fujita, Y
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 338 - 342
  • [47] Structure of dangling bonds having hydrogen at a nearby site in a-Si:H
    Hiroshima Inst of Technology, Hiroshima, Japan
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 338 - 342
  • [48] Effect of hydrogen radical exposure on the interfacial and bulk structure of a-Si:H/a-SiNx:H multilayer films
    Han, GR
    Du, PY
    Shou, JH
    Zhao, DM
    THIN SOLID FILMS, 1998, 334 (1-2) : 6 - 10
  • [49] DENSITY OF STATES STUDY OF SPUTTERED AND EVAPORATED a-Si:H BY SPACE-CHARGE-LIMITED CURRENT TECHNIQUE.
    Gangopadhyay, S.
    Iselborn, S.
    Ruebel, H.
    Schroeder, B.
    Geiger, J.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 51 (03):
  • [50] Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane
    Danesh, P
    Pantchev, B
    Savatinova, I
    Liarokapis, E
    Kaschieva, S
    Belov, AG
    VACUUM, 2002, 69 (1-3) : 79 - 82