HIGH SPEED LOGIC IMPLEMENTATION OF THE HETEROSTRUCTURE BIPOLAR TRANSISTOR.

被引：0

|

作者：

Tiwari, S.

机构：

来源：

IBM technical disclosure bulletin | 1985年 / 27卷 / 09期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

页码：5333 / 5334

相关论文

共 50 条

[31] Very high speed SiGe heterojunction bipolar transistor reliability overview
Guarin, F.
Yang, Z.
Freeman, G.
PROCEEDINGS OF THE 6TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS, AND SYSTEMS, 2006, : 131 - +
[32] Strained bipolar charge plasma transistor as a high speed LIF neuron
Priyanka
Singh, Sangeeta
Panchore, Meena
MICRO AND NANOSTRUCTURES, 2025, 203
[33] OPTIMIZATION OF THE CIRCUIT-DESIGN AND PROCESS FOR LOGIC ELEMENTS AND TRANSISTOR STRUCTURES FOR VERY-HIGH-SPEED LSI BIPOLAR ICS
BUBENNIKOV, AN
SOVIET MICROELECTRONICS, 1984, 13 (04): : 194 - 201
[34] High-speed logic gates based on multiple-β transistor
吴训威
蒋保伟
Chinese Science Bulletin, 1996, (04) : 343 - 347
[35] A HIGH-SPEED INTEGRATED SCHOTTKY DIODE TRANSISTOR LOGIC CIRCUIT
PRICE, JE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 241 - &
[36] THEORETICAL VALUES OF VARIOUS PARAMETERS IN THE GUMMEL-POON MODEL OF A BIPOLAR JUNCTION TRANSISTOR.
Benumof, Reuben
Zoutendyk, John
1600, (59):
[37] GLASS-PASSIVATED HIGH-VOLTAGE POWER TRANSISTOR.
Tomisawa, Yutaka
Emoto, Takao
Yonezawa, Toshio
Miyakawa, Masafumi
Toshiba review International ed., 1981, (134): : 36 - 39
[38] Influence of bipolar transistor parameters on speed of bipolar differential couple
Dai, Tiejun
Yang, Zhaomin
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (02): : 138 - 143
[39] TWO-DIMENSIONAL NUMERICAL MODEL FOR THE HIGH ELECTRON MOBILITY TRANSISTOR.
Loret, Dany
Solid-State Electronics, 1986, 30 (11) : 1197 - 1203
[40] SUB-MICRON ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH HIGH-GAIN
ANZLOWAR, M
HUMPHREY, DA
SIVCO, D
CHO, AY
NOTTENBURG, RN
LEVI, AFJ
ELECTRONICS LETTERS, 1989, 25 (22) : 1529 - 1530

← 1 2 3 4 5 →