Towards the improvement of the stability of a-Si:H pin devices

被引：0
|
作者：
Martins, R. [1 ]
Aguas, H. [1 ]
Ferreira, I. [1 ]
Fortunato, E. [1 ]
Guimares, L. [1 ]
机构：
[1] CENIMAT, DCM da Fac. de Ciencias e Tech., Univ. Nova de Lisboa/CEMOPUNINOVA, Quinta da Torre, Monte de Caparica 2829-506, Portugal
来源：
Solar Energy | 2001年 / 69卷 / SUPPLEMENT期
关键词：
Pin devices;
D O I：
10.1016/S0038-092X(01)00063-9
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：257 / 262
相关论文
共 50 条
  • [31] A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs
    Chaji, GR
    Striakhilev, D
    Nathan, A
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) : 737 - 739
  • [32] Noise of a-Si:H pin diode pixels in imagers at different operating conditions
    Blecher, F
    Schneider, B
    Sterzel, J
    Böhm, M
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 869 - 874
  • [33] Effects of 1 MeV-electron irradiation on a-Si:H pin diodes
    Li, L.-Q., 2001, Chinese Institute of Electronics (29):
  • [34] Improvement in a-Si:H properties by inert gas plasma treatment
    Maruyama, E
    Hishikawa, Y
    Tanaka, M
    Kiyama, S
    Tsuda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A): : 33 - 37
  • [35] Improvement in a-Si:H properties by inert gas plasma treatment
    Maruyama, E
    Hishikawa, Y
    Tanaka, M
    Kiyama, S
    Tsuda, S
    AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 : 329 - 334
  • [36] Defects in a-Si and a-Si:H:: A numerical study
    Knief, S
    von Niessen, W
    Koslowski, T
    PHYSICAL REVIEW B, 1998, 58 (08): : 4459 - 4472
  • [37] a-Si: H/a-Si: H/μc-Si: H triple junction solar cells
    Zheng Xin-Xia
    Zhang Xiao-Dan
    Yang Su-Su
    Wang Guang-Hong
    Xu Sheng-Zhi
    Wei Chang-Chun
    Sun Jian
    Geng Xin-Hua
    Xiong Shao-Zhen
    Zhao Ying
    ACTA PHYSICA SINICA, 2011, 60 (06)
  • [38] Influence of ZnO/p+a-Si:H microcrystallization and antireflection coatings on pin a-Si:H solar cells performance
    Kolodziej, A
    Krewniak, P
    Nowak, S
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 583 - 588
  • [39] 玻璃/ITO/pin a-Si电池研究
    熊绍珍
    孙钟林
    王宗畔
    太阳能学报, 1986, (03) : 331 - 338
  • [40] Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices
    Jo, Sung Hyun
    Lu, Wei
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 116 - 117
12345