Towards the improvement of the stability of a-Si:H pin devices

被引：0
|
作者：
Martins, R. [1 ]
Aguas, H. [1 ]
Ferreira, I. [1 ]
Fortunato, E. [1 ]
Guimares, L. [1 ]
机构：
[1] CENIMAT, DCM da Fac. de Ciencias e Tech., Univ. Nova de Lisboa/CEMOPUNINOVA, Quinta da Torre, Monte de Caparica 2829-506, Portugal
来源：
Solar Energy | 2001年 / 69卷 / SUPPLEMENT期
关键词：
Pin devices;
D O I：
10.1016/S0038-092X(01)00063-9
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：257 / 262
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