FINE PATTERN ETCHING TECHNIQUE OF SILICON SUBSTRATE.

被引：0

作者：

Kawabata, Ryohei

Kimura, Daisuke

Komiya, Hideo

Shimizu, Hiroaki

机构：

来源：

Shapu Giho/Sharp Technical Journal | 1985年 / 33期

关键词：

IONS; -; Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The authors describe a newly developed RIE technique using some additional gases to SF6. They have succeeded in getting high-selectivity to photo resist and a clean etched surface with no residue, which were difficult to achieve in usual directional silicon etching. The suppression mechanism of the undercut was studied, and then both high aspect ratio patterns and controlled tapered patterns of silicon were obtained by the choice of the gas mixing ratio.

引用

页码：47 / 54

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