Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation

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Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf e.V., P.O. Box 510119, 01314 Dresden, Germany [1 ]
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Applied Physics A: Materials Science and Processing | 2000年 / 71卷 / 02期
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页码：175 / 180
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