Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in N2/Ar/SiH4

被引:0
|
作者
Moshkalyov, S.A.
Diniz, J.A.
Swart, J.W.
Tatsch, P.J.
Machida, M.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] KINETICS OF SURFACE-REACTIONS IN VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SI FROM SIH4
    GATES, SM
    KULKARNI, SK
    APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2963 - 2965
  • [32] RATE CONSTANTS FOR THE REACTIONS OF SIH AND SIH2 WITH SIH4 IN A LOW-PRESSURE SIH4 PLASMA
    NOMURA, H
    AKIMOTO, K
    KONO, A
    GOTO, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (09) : 1977 - 1982
  • [33] Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition
    Sundaram, KB
    Sah, RE
    Baumann, H
    Balachandran, K
    Todi, RM
    MICROELECTRONIC ENGINEERING, 2003, 70 (01) : 109 - 114
  • [34] Effect of aging on stress in silicon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition technique
    Sah, RE
    Baumann, H
    Serries, D
    Kiefer, R
    Braunstein, J
    SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1999, 99 (06): : 26 - 37
  • [35] Radical fluxes in electron cyclotron resonance plasma chemical vapor deposition of amorphous silicon
    Zhang, M
    Nakayama, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (11): : 5965 - 5970
  • [36] HIGH-FLUIDITY DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SI2H6 OR SIH4
    SHIN, H
    HASHIMOTO, M
    OKAMOTO, K
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6B): : 3081 - 3084
  • [37] Silicon nitride films deposited by low pressure chemical vapor deposition from SiH4-NH3-N2 system
    Liu, XJ
    Huang, ZY
    Huang, LP
    EURO CERAMICS VIII, PTS 1-3, 2004, 264-268 : 643 - 646
  • [38] Radical fluxes in electron cyclotron resonance plasma chemical vapor deposition of amorphous silicon
    Zhang, Mei
    Nakayama, Yoshikazu
    1600, JJAP, Minato-ku, Japan (34):
  • [39] SILICON-NITRIDE DEPOSITION BY PLASMA ENHANCED LOW-PRESSURE CVD TECHNIQUE
    SEQUEDA, F
    RICHARDSON, RE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 362 - 363
  • [40] A STUDY ON THE BEHAVIOR OF SIO2 FILM PRECURSORS WITH TRENCH DEPOSITION METHOD FOR SIH4/O2 LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    KAWAHARA, T
    YUUKI, A
    MATSUI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (03): : 431 - 436