RTD/HFET low standby power SRAM gain cell

被引:0
|
作者
Raytheon TI Systems, Dallas, United States [1 ]
机构
来源
IEEE Electron Device Lett | / 1卷 / 7-9期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Random access storage
引用
收藏
相关论文
共 50 条
  • [1] RTD/HFET low standby power SRAM gain cell
    vanderWagt, P
    Seabaugh, A
    Beam, E
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 425 - 428
  • [2] RTD/HFET low standby power SRAM gain cell
    van der Wagt, JPA
    Seabaugh, AC
    Beam, EA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1998, 19 (01) : 7 - 9
  • [3] Design of a Low Standby Power CNFET Based SRAM Cell
    Emon, Daud Hasan
    Mohammad, Nabil
    Mominuzzaman, Sharif Mohammad
    [J]. 2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE), 2012,
  • [4] SRAM Cell Optimization for Ultra-Low Power Standby
    Qin, Huifang
    Vattikonda, Rakesh
    Trinh, Thuan
    Cao, Yu
    Rabaey, Jan
    [J]. JOURNAL OF LOW POWER ELECTRONICS, 2006, 2 (03) : 401 - 411
  • [5] Low-standby-power SRAM cell promises high-density memories
    Bursky, D
    [J]. ELECTRONIC DESIGN, 1997, 45 (02) : 27 - 28
  • [6] Finfet based sram design for low standby power applications
    Cakici, Tamer
    Kim, Keejong
    Roy, Kaushik
    [J]. ISQED 2007: PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2007, : 127 - +
  • [7] Efficient Voltage Conversion for SRAM Low Standby Power Modes
    Clark, Lawrence T.
    Chen, Tai-Hua
    Chaudhary, Vikas
    [J]. 2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 73 - 76
  • [8] A low standby-power fast carbon nanotube ternary SRAM cell with improved stability
    Gang Li
    Pengjun Wang
    Yaopeng Kang
    Yuejun Zhang
    [J]. Journal of Semiconductors, 2018, 39 (08) : 74 - 80
  • [9] A low standby-power fast carbon nanotube ternary SRAM cell with improved stability
    Li, Gang
    Wang, Pengjun
    Kang, Yaopeng
    Zhang, Yuejun
    [J]. JOURNAL OF SEMICONDUCTORS, 2018, 39 (08)
  • [10] A low standby-power fast carbon nanotube ternary SRAM cell with improved stability
    Gang Li
    Pengjun Wang
    Yaopeng Kang
    Yuejun Zhang
    [J]. Journal of Semiconductors, 2018, (08) : 74 - 80