Organic monolayers on Si(111) by electrochemical method

被引：0
|
作者：
CNRS, Paris, France [1 ]
机构：
来源：
Electrochim Acta | / 19-20卷 / 2791-2798期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)
    Chuah, L. S.
    Hassan, Z.
    Abu Hassan, H.
    SURFACE REVIEW AND LETTERS, 2009, 16 (01) : 99 - 103
  • [32] Aluminum monolayers on Si (111) for MBE-growth of GaN
    Liu, X. Y.
    Li, H. F.
    Uddin, A.
    Andersson, T. G.
    JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) : 114 - 117
  • [33] Molecular simulation study of different monolayers on Si(111) surface
    Yuan, SL
    Zhang, Y
    Li, Y
    Xu, GY
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2004, 242 (1-3) : 129 - 135
  • [34] Molecular simulation of alkyl monolayers on the Si(111) surface YUAN
    苑世领
    蔡政亭
    肖莉
    徐桂英
    刘永军
    Science in China(Series B), 2003, (02) : 168 - 175
  • [35] Thermal Stability of Organic Monolayers Grafted to Si(111): Insights from ReaxFF Reactive Molecular Dynamics Simulations
    Soria, Federico A.
    Zhang, Weiwei
    van Duin, Adri C. T.
    Patrito, Eduardo M.
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (36) : 30969 - 30981
  • [36] Monolayers of Al on the Si(111) surface: Atomic and electronic structure
    Zavodinsky, VG
    Kuyanov, IA
    Zavodinskaya, OM
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 5-6 : 123 - 129
  • [37] Synthesis and Characterization of Mixed Methyl/Allyl Monolayers on Si(111)
    O'Leary, Leslie E.
    Johansson, Erik
    Brunschwig, Bruce S.
    Lewis, Nathan S.
    JOURNAL OF PHYSICAL CHEMISTRY B, 2010, 114 (45): : 14298 - 14302
  • [38] Interface properties and passivation of p-Si(111) surfaces by electrochemical organic layer deposition
    Guell, A. G.
    Roodenko, K.
    Yang, F.
    Hinrichs, K.
    Gensch, M.
    Sanz, F.
    Rappich, J.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 273 - 276
  • [39] Electrochemical nucleation and growth of copper on Si(111)
    Ji, CX
    Oskam, G
    Searson, PC
    SURFACE SCIENCE, 2001, 492 (1-2) : 115 - 124
  • [40] Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface
    Bensliman, F
    Aggour, M
    Ennaoui, A
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12A): : L1206 - L1208
12345