Organometallic vapor-phase epitaxy of GaAs using triethylarsenic as arsenic source

被引：0

作者：

Fujita, Shizuo ^{[1
]}

Uemoto, Yasuhiro ^{[1
]}

Araki, Soichiro ^{[1
]}

Imaizumi, Masayuki ^{[1
]}

Takeda, Yoshikazu ^{[1
]}

Sasaki, Akio ^{[1
]}

机构：

[1] Kyoto Univ, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 07期

关键词：

Crystals--Epitaxial Growth - Organometallics;

D O I：

暂无

中图分类号：

TM2 [电工材料]; TN [电子技术、通信技术];

学科分类号：

0805 ; 080502 ; 080801 ; 0809 ;

摘要：

GaAs layers are grown by organometallic vapor-phase epitaxy (OMVPE) from trimethylgallium (TMGa) and triethylarsenic (TEAs) source gases under various growth conditions. Mirror-like surfaces are obtained at growth temperatures 560 to 780°C and at [TEAs]/[TMGa] ratios 1.3 to 7.3. Samples grown at temperatures higher than 670°C exhibit n-type conductivity, while those lower than 600°C exhibit p-type. For n-type samples, the highest Hall mobilities obtained so far are 5270 cm2/Vs and 12200 cm2/Vs at 300 K and 77 K, respectively, with the electron concentration of 7.5×1015 cm-3. Similar to the conventional GaAs layers grown by various techniques, scattering by ionized impurities and space charges caused by some impurities transported with TEAs seems to degrade electrical properties.

引用

页码：1151 / 1155

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