Current density dependence for dark-line defect growth velocity in strained InGaAs/AlGaAs quantum well laser diodes

被引：0
|
作者：
机构：
[1] Fukagai, Kazuo
[2] Ishikawa, Shin
[3] Endo, Kenji
[4] Yuasa, Tonao
来源：
Fukagai, Kazuo | 1600年 / 30期
关键词：
Electron Beams - Semiconducting Films - Strain - Semiconducting Indium Compounds - Semiconductor Diodes - Electric Properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Dark-line defects (DLDs) of threading dislocation origin in strained InGaAs/AlGaAs quantum well laser diodes were observed by the electron-beam induced current technique. Current density dependence for the DLD growth velocity was compared quantitatively with that for unstrained GaAs/AlGaAs quantum well laser diodes for the first time. The 〈110〉 DLD growth velocity in InGaAs QW laser diodes is estimated to be about 1/100 of that for the 〈110〉 DLD growth in the GaAs QW laser diodes, showing linear dependence on injected current densities.
引用
收藏
相关论文
共 50 条
  • [21] Low threshold current density 1.3 μm metamorphic InGaAs/GaAs quantum well laser diodes
    Wu, D.
    Wang, H.
    Wu, B.
    Ni, H.
    Huang, S.
    Xiong, Y.
    Wang, P.
    Han, Q.
    Niu, Z.
    Tangring, I.
    Wang, S. M.
    ELECTRONICS LETTERS, 2008, 44 (07) : 474 - U6
  • [22] The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
    Gareso, P. L.
    Buda, M.
    Tan, H. H.
    Jagadish, C.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2017, 55 (05) : 333 - 338
  • [23] Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser
    Saidi, Hosni
    Zitouni, Omar
    Ridene, Said
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 273
  • [24] Threshold current density and differential gain in InGaAs/InGaAlAs strained quantum well lasers
    Park, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 30 (02) : 280 - 285
  • [25] High-power highly reliable 1.06μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers
    Yuda, M
    Temmyo, J
    Sasaki, T
    Sugo, M
    Amano, C
    ELECTRONICS LETTERS, 2003, 39 (08) : 661 - 662
  • [26] Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained-Layer Single Quantum Well High Power Laser Diodes
    Foran, Brendan
    Ives, Neil
    Yeoh, Terence
    Brodie, Miles
    Sin, Yongkun
    Presser, Nathan
    Mason, Maribeth
    Moss, Steven C.
    MICROSCOPY AND MICROANALYSIS, 2009, 15 : 598 - 599
  • [27] LOW THRESHOLD CURRENT HIGH-TEMPERATURE OPERATION OF INGAAS ALGAAS STRAINED-QUANTUM-WELL LASERS
    DERRY, PL
    HAGER, HE
    CHIU, KC
    BOOHER, DJ
    MIAO, EC
    HONG, CS
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) : 1189 - 1191
  • [28] Wavelength extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole δ-doping
    Wang, XD
    Wang, SM
    Wei, YQ
    Zhao, QX
    Sadeghi, M
    Larsson, A
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 428 - 430
  • [29] Improved coupling efficiency of a strained InGaAs-AlGaAs quantum-well laser into a fiber Bragg grating
    Temmyo, J
    Sugo, M
    Nishiya, T
    Tamamura, T
    Bilodeau, F
    Hill, KO
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (05) : 581 - 583
  • [30] Optimization of threshold current density for compressive-strained InGaAs/GaAs quantum well lasers
    Park, Seounghwan
    Jeong, Weonguk
    Kim, Hwamin
    Kim, In
    Choe, Byungdoo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (12 A): : 5584 - 5585
12345