High-reflective 1.5 μm GaInAsP/InP Bragg reflectors grown by metal organic vapor phase epitaxy

被引：0
|
作者：
Streubel, K. [1 ]
Wallin, J. [1 ]
Zhu, L. [1 ]
Landgren, G. [1 ]
Queisser, I. [1 ]
机构：
[1] Royal Inst of Technology, Kista, Sweden
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B28卷 / 1-3期
关键词：
Doping (additives) - Electric conductivity - Metallorganic vapor phase epitaxy - Morphology - Optoelectronic devices - Semiconducting gallium arsenide - Semiconducting indium phosphide - Semiconductor device structures - Silicon;
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摘要：
Bragg reflectors with very high reflectivities at 1550 nm were grown using metal organic vapor phase epitaxy. Mirrors with 45 and 50 periods exhibit peak reflectivities up to 99.9%. Absolute reflectivity values were determined by modelling the spectral reflectivity around the stopband width. Similar high reflectivities were obtained with Si-doped mirrors. A resistivity of 5.4 × 10-3 Ω cm was obtained on 45-period mirrors at a doping level of 1 × 1019 cm-1.
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页码：285 / 288
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