Preparation and properties of Ru and RuO2 thin film electrodes for ferroelectric thin films

被引：0
|
作者：
Maiwa, Hiroshi [1 ]
Ichinose, Noboru [1 ]
Okazaki, Kiyoshi [1 ]
机构：
[1] Shonan Inst of Technology, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1994年 / 33卷 / 9 B期
关键词：
Crystal structure - Deposition - Electric properties - Electrodes - Fatigue of materials - Film preparation - Magnetron sputtering - Oxides - Pressure control - Ruthenium compounds - Thin films;
D O I：
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中图分类号：
学科分类号：
摘要：
Ru and RuO2 thin films were prepared by RF magnetron sputtering. The crystalline structure and electrical properties of these films were investigated. Reactive sputtering of a ruthenium metal target was carried out in a mixed gas of argon and oxygen at 580 °C. Total pressure (PO(2)+PAr) was controlled to maintain a constant pressure of 1 Pa. The RuO2 single phase could be obtained when PO(2) was 0.5 Pa and the deposition rate was about 30 nm/min. The resistivity of the 290 nm-thick RuO2 thin films deposited on SiO2(1000 nm)/Si was 54.9 μΩ&middotcm. However, the resistivity increased with decreasing film thickness. Fatigue resistance of (Pb, La)TiO3 thin films with RuO2 as top and bottom electrodes was improved compared to the films on Pt electrodes.
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页码：5223 / 5226
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